| PART |
Description |
Maker |
| 3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK51 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK194 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK186 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| NE41137 |
N-Channel GaAs Dual Gate MES FET
N-CHANNEL GAASDUAL-GATE MESFET
|
California Eastern Laboratories
NEC[NEC]
|
| MFE211 MFE212 |
N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS
|
Digitron Semiconductors
|
| 3SK22607 3SK226 |
Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications
|
Toshiba Semiconductor
|
| MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| IW4012BD IW4012BN |
Dual 4-input NAND gate, high-voltage silicon-gate CMOS
|
INTEGRAL
|
| KK4002B |
Dual 4-Input NOR Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
| KK74ACT21 KK74ACT21D KK74ACT21N |
Dual 4-Input AND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
